Molecular beam epitaxial growth of Bi2Se3- and Tl2Se-doped PbSe and PbEuSe on CaF2/Si„111..
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چکیده
We report results on the incorporation of Bi ~n type! and Tl ~p-type! impurity in PbSe and PbEuSe grown on CaF2 /Si~111! by molecular beam epitaxy. Bi2Se3 and Tl2Se were used as sources of dopants in the growth. Electron concentrations in the low 10 cm range and hole concentrations in the middle 10 cm range have been realized in the PbSe and PbEuSe layers with Eu content up to 3%. Electron and hole mobilities are comparable to those for PbSe and PbEuSe grown on BaF2. © 1998 American Vacuum Society. @S0734-211X~98!09503-1#
منابع مشابه
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تاریخ انتشار 1998